Highly Uniform Switching of Tantalum Embedded Amorphous Oxide Using Self-Compliance Bipolar Resistive Switching
- 4 February 2011
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 32 (3), 399-401
- https://doi.org/10.1109/led.2010.2101044
Abstract
A new approach of self-compliance bipolar switching of tantalum embedded amorphous oxide for highly reliable and uniform switching was investigated. Based on analytic results, the formation of a metallic tantalum embedded amorphous oxide film was confirmed. Robust characteristics of over cycles with no change at both resistance states under voltage pulses were achieved due to the self-compliance function, which originated from the limitation of current by metallic ohmic load resistance. In addition, an oxygen plasma pulse method for interface oxidation was demonstrated.Keywords
This publication has 14 references indexed in Scilit:
- Modeling for bipolar resistive memory switching in transition-metal oxidesPhysical Review B, 2010
- Impact of Defect Distribution on Resistive Switching Characteristics of Sr2TiO4 Thin FilmsAdvanced Materials, 2010
- Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and ChallengesAdvanced Materials, 2009
- Highly reliable TaOx ReRAM and direct evidence of redox reaction mechanismPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2008
- Memristive switching mechanism for metal/oxide/metal nanodevicesNature Nanotechnology, 2008
- Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3Nature Materials, 2006
- Hysteretic current–voltage characteristics and resistance switching at a rectifying Ti∕Pr0.7Ca0.3MnO3 interfaceApplied Physics Letters, 2004
- Field-driven hysteretic and reversible resistive switch at the Ag–Pr0.7Ca0.3MnO3 interfaceApplied Physics Letters, 2003
- Materials design of perovskite-based oxygen ion conductor by molecular dynamics methodSolid State Ionics, 2003
- Electrochemical properties of junction between protonic conductor and oxide ion conductorSolid State Ionics, 1997