Modeling for bipolar resistive memory switching in transition-metal oxides

Abstract

A model which describes the bipolar resistive switching in transition-metal oxides is presented. To simulate the effect of switching, we modeled results of doping by oxygen vacancies along with variable Schottky barrier and resistor. The model simultaneously predicts three key features of experimental measurements: the rectifying behavior in high resistance states, abrupt switching, and the existence of bistable resistance states. Our model is based on modulation of Schottky barrier formed by variable resistance oxide layer at the metal-oxide interface. Experimental measurements of the $\text{Pt}/{\text{Ta}}_2{\text{O}}_5/{\text{TaO}}_x/\text{Pt}$ structure matched very well with our nonvolatile resistive switching model. DOI: http://dx.doi.org/10.1103/PhysRevB.82.155321 © 2010 The American Physical Society