New mode of plasma deposition in a capacitively coupled reactor

Abstract

A new technique of radio frequency plasma‐enhanced chemical vapor deposition is developed to achieve extremely high growth rates exceeding 40 Å/s. The two disk electrodes are surrounded by a stainless‐steel mesh at ground potential, and an external variable reactance is connected between the substrate electrode and the ground. When the resonance condition in the circuit composed of the variable reactance and the substrate sheath capacitance is satisfied, a very high deposition rate is obtained as a result of dramatic change in the potential distribution between the two electrodes.