Room-temperature excitons in Ga0.47In0.53As-InP superlattices grown by low-pressure metalorganic chemical vapor deposition
- 27 October 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (17), 1110-1111
- https://doi.org/10.1063/1.97437
Abstract
Very high quality Ga0.47In0.53As‐InP heterojunctions, quantum wells, and superlattices have been grown by low‐pressure metalorganic chemical vapor deposition. Excitation spectroscopy shows evidence of strong and well‐resolved exciton peaks in the luminescence and excitation spectra of GaInAs‐InP quantum wells. Optical absorption spectra show room‐temperature excitons in GaInAs‐InP superlattices.Keywords
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