Investigations on the Structure of MOCVD AIN Layers on Silicon
- 16 May 1983
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 77 (1), 195-199
- https://doi.org/10.1002/pssa.2210770123
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- MOCVD of A1N on SiliconPhysica Status Solidi (a), 1982
- Aluminum Nitride Epitaxially Grown on Silicon: Orientation RelationshipsJapanese Journal of Applied Physics, 1981
- Reactive molecular beam epitaxy of aluminium nitrideJournal of Vacuum Science and Technology, 1979
- Epitaxial growth and piezoelectric properties of A1N, GaN, and GaAs on sapphire or spinelJournal of Electronic Materials, 1973
- GROWTH MECHANISM OF WHISKERS AND NEEDLE CRYSTALS (PRISMS) OF ALUMINUM NITRIDEMineralogical Journal, 1971
- The Use of Metalorganics in the Preparation of Semiconductor MaterialsJournal of the Electrochemical Society, 1971