Ion implantation of silicon in gallium arsenide: Damage and annealing characterizations
- 15 May 1983
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research
- Vol. 209-210, 737-742
- https://doi.org/10.1016/0167-5087(83)90876-1
Abstract
No abstract availableKeywords
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