Study of electronic levels in antimony and indium-doped gallium arsenide
- 15 January 1985
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 57 (2), 623-625
- https://doi.org/10.1063/1.334751
Abstract
We have studied heavily doped GaAs:Sb and GaAs:In by temperature-dependent Hall effect and photoluminescence spectroscopy. Both samples had good mobilities and the GaAs:In was semi-insulating. We have found a new deep level in GaAs:Sb at 0.47 eV below the conduction band. Both samples showed new weak luminescence bands near the intrinsic edge which are as yet unidentified.Keywords
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