O environment of unpaired Si bonds (defects) at the (111)Si/interface
- 15 November 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 44 (20), 11353-11357
- https://doi.org/10.1103/physrevb.44.11353
Abstract
The immediate oxygen environment in the silica side of the [111] defect (an interfacial ̇Si? defect with an unpaired -like hybrid perpendicular to the interface) has been revealed from hyperfine (HF) structure electron-spin-resonance measurements on (111)Si/ structures enriched to 51.24% . The results show that the hybrid has its strongest HF interaction, characterized by the HF splitting constant =2.7±0.15 G, with only one O site in a first shell, a next interaction of =1.1 G with one O site in a second shell, and a third interaction of ≊0.2 G with two equivalent O sites in a third shell. These results complete the model of the defect and conflict with a previously proposed tridymitelike model for the silica side of the defect.
Keywords
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