Optically Detected Magnetic Resonance in Fluorinated Amorphous Silicon (a-Si:F, a-Si:F, H and a-Si:F, D)
- 1 August 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (8A), L593
- https://doi.org/10.1143/jjap.23.l593
Abstract
Optically detected magnetic resonance measurements were carried out at 2 K in a-Si:F, a-Si:F, H and a-Si:F, D. A correlation of A centres (trapped hole centres) with hydrogen is discussed as well as the importance of hydrogen for the luminescence fatigue.Keywords
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