Abstract
Recent progress in monolithic waveguide-photodetector integration on III-V semiconductors for applications in the 0.8-1.6- mu m wavelength range is reviewed. Critical issues for device performance and fabrication are discussed, followed by a description of the underlying optical coupling mechanisms. Tradeoffs between performance and integrability are assessed in detail for vertical and butt coupling and their variants. It is shown how appropriately chosen integration techniques have led to a variety of monolithic devices for advanced lightwave receivers.