Deep-level traps in low-dose boron-implanted and low-temperature annealed silicon

Abstract

The electronic defect levels in low‐dose (1–8×10¹² cm⁻²) B‐implanted Si after annealing at 550 °C are measured by the deep level transient spectroscopy method. The defects, which distribute in accordance with the B profile, are assigned to interstitial‐ and vacancy‐boron complexes; E_v +0.27 and E_v +0.43 eV, and E_v +0.47 eV, respectively. In contrast with these defects, a uniform distribution in the implanted layer is observed for E_v +0.56 eV, which is assigned to a divacancy and/or vacancy cluster. Other defects of which the energy levels are very close to those of interstitial‐ and vacancy‐oxygen complexes are also observed.