Properties of Be-implanted planar GaAs p-n junctions
- 1 August 1978
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 13 (4), 426-429
- https://doi.org/10.1109/jssc.1978.1051072
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
- R.F. plasma deposition of silicon nitride layersThin Solid Films, 1978
- Diffusion studies of Be-implanted GaAs by SIMS and electrical profilingSolid State Communications, 1978
- Study of Encapsulants for Annealing GaAsJournal of the Electrochemical Society, 1977
- Electrical profiling and optical activation studies of Be-implanted GaAsJournal of Applied Physics, 1977
- Temperature dependence of electrical properties in Be-implanted semi-insulating GaAsJournal of Applied Physics, 1977
- Reduced lateral diffusion and reverse leakage in Be-implanted GaAs1−xPxdiodesSolid-State Electronics, 1977
- 4-GHz frequency division with GaAs MESFET ICsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1977
- Low-loss GaAs p+n−n+ three-dimensional optical waveguidesApplied Physics Letters, 1976
- Temperature dependence of photoluminescence from Be-implanted GaAsApplied Physics Letters, 1976
- OUTDIFFUSION THROUGH SILICON OXIDE AND SILICON NITRIDE LAYERS ON GALLIUM ARSENIDEApplied Physics Letters, 1970