The presence of silicon on the surface of platinum films evaporated onto a number of silicon-containing supports
- 1 July 1983
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 105 (1), 9-15
- https://doi.org/10.1016/0040-6090(83)90325-5
Abstract
No abstract availableKeywords
This publication has 26 references indexed in Scilit:
- Al reaction with SiO2 an auger electron spectroscopy and energy loss spectroscopy studyApplied Physics A, 1982
- Chemical reaction at the Ge(111)-Ag and Si(111)-Ag interfaces for small Ag coveragesSurface Science, 1981
- Initial stage of room-temperature metal-silicide formation studied by high-energy-ion scatteringPhysical Review B, 1981
- Effects of a thin SiO2 layer on the formation of metal–silicon contactsJournal of Vacuum Science and Technology, 1981
- Refractory silicides for integrated circuitsJournal of Vacuum Science and Technology, 1980
- Review of binary alloy formation by thin film interactionsJournal of Vacuum Science and Technology, 1979
- Marker studies of silicide formation, silicon self-diffusion and silicon epitaxy using radioactive silicon and Rutherford backscatteringNuclear Instruments and Methods, 1978
- Microstructural and Electrical Properties of Thin PtSi Films and Their Relationships to Deposition ParametersJournal of the Electrochemical Society, 1975
- Atom movements occurring at solid metal-semiconductor interfacesJournal of Vacuum Science and Technology, 1974
- Metallurgical properties and electrical characteristics of palladium silicide-silicon contactsSolid-State Electronics, 1971