Characteristics of the metal insulator semiconductor structure:AlN/Si

Abstract

Single‐crystal AlN layers have been grown on Si substrates at ∼1200 °C using metalorganic chemical vapor deposition. The metal/AlN/Si MIS structures have been investigated by the MIS conductance method. It was found that the interface‐state density N_ss and electron capture cross section σ_n in the depletion region are of the order of 10¹¹ eV⁻¹ cm⁻² and 10⁻¹⁷ cm, respectively.