AES study of the low-pressure oxidation of Si(100): Electron beam effects
- 2 March 1983
- journal article
- Published by Elsevier in Surface Science
- Vol. 126 (1-3), 495-501
- https://doi.org/10.1016/0039-6028(83)90748-3
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- SiO2 ultra thin film growth kinetics as investigated by surface techniquesSurface Science, 1982
- Aes study of silicon bonding states during oxidation of Si(111)Surface Science, 1980
- Summary Abstract: Intermediate oxidation state of Si(111): Core photoelectron absorption versus chemical shiftsJournal of Vacuum Science and Technology, 1980
- High-Resolution X-Ray Photoelectron Spectroscopy as a Probe of Local Atomic Structure: Application to Amorphous Siand the Si-SiInterfacePhysical Review Letters, 1979
- Oxide formation on the silicon (111) surface studied by Auger electron spectroscopy and by low energy electron loss spectroscopyThin Solid Films, 1979
- Electron-spectroscopic studies of the early stages of the oxidation of SiPhysical Review B, 1979
- Quantitative electron spectroscopy of surfaces: A standard data base for electron inelastic mean free paths in solidsSurface and Interface Analysis, 1979
- Core excitons and inner well resonances in surface soft x-ray absorption (SSXA) spectraSurface Science, 1979
- X-Ray Photoelectron Spectroscopy of SiO2-Si Interfacial Regions: Ultrathin Oxide FilmsIBM Journal of Research and Development, 1978
- An investigation of silicon-oxygen interactions using Auger electron spectroscopySurface Science, 1971