p-n junction formation in n-AlGaAs by beryllium ion implantation
- 15 December 1981
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 39 (12), 989-991
- https://doi.org/10.1063/1.92637
Abstract
Beryllium‐implanted liquid phase epitaxy n‐AlGaAs layers have exhibited p‐n junction behavior after annealing. Graded or abrupt junction behavior was found to be implant fluence dependent. Secondary ion mass spectrometry Be concentration profiles indicate that the graded junctions observed for the higher fluence implants were due to in‐depth migration of Be. Mesa diodes have shown ideality factors of about 2 and avalanche breakdown in reverse bias.Keywords
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