Steric hindrance effects in atomic layer epitaxy of InAs
- 17 July 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (3), 244-246
- https://doi.org/10.1063/1.101920
Abstract
Atomic layer epitaxy of InAs is demonstrated. Saturation of the growth rate of one monolayer per cycle is achieved at a growth temperature of 340 °C. The growth rate is found to be a strong function of trimethylindium exposure times for the same total amount of reactant exposure per cycle. There is a threshold exposure time to achieve a growth rate of one monolayer per cycle. For shorter exposure time, the growth rate saturates to sub-one monolayer per cycle. The dependence of growth rate on exposure time is explained by steric hindrance effects of the initial adsorbate.Keywords
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