Steric hindrance effects in atomic layer epitaxy of InAs

Abstract

Atomic layer epitaxy of InAs is demonstrated. Saturation of the growth rate of one monolayer per cycle is achieved at a growth temperature of 340 °C. The growth rate is found to be a strong function of trimethylindium exposure times for the same total amount of reactant exposure per cycle. There is a threshold exposure time to achieve a growth rate of one monolayer per cycle. For shorter exposure time, the growth rate saturates to sub-one monolayer per cycle. The dependence of growth rate on exposure time is explained by steric hindrance effects of the initial adsorbate.