A new method of fabricating gallium arsenide MOS devices
- 1 March 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 32 (5), 332-333
- https://doi.org/10.1063/1.90040
Abstract
A new method of fabricating gallium arsenide MOS devices with improved electrical properties is discussed. The device consists of a gallium arsenide substrate overlaid with a gallium arsenic oxide, a thin aluminum oxide, and a metallic contact. The oxide layers are fabricated using a plasma oxidizing process. These MOS devices show very high breakdown voltages (typically ≈±4×106 V/cm) and have low surface‐state densities (≈5×1010 cm−2).Keywords
This publication has 9 references indexed in Scilit:
- Plasma‐Grown Oxide on GaAs: Semiquantitative Chemical Depth Profiles Obtained Using Auger Spectroscopy and Neutron Activation AnalysisJournal of the Electrochemical Society, 1978
- Plasma oxidation of aluminum film on GaAs—A study by Auger spectroscopy and transmission electron microscopyApplied Physics Letters, 1977
- Analysis of plasma-grown GaAs oxide filmsApplied Physics Letters, 1977
- Stable charge storage of m.a.o.s. diodes on GaAs by new anodic oxidationElectronics Letters, 1977
- Multipurpose plasma reactor for materials research and processingJournal of Vacuum Science and Technology, 1977
- Plasma oxidation of GaAsApplied Physics Letters, 1976
- New anodic native oxide of GaAs with improved dielectric and interface propertiesApplied Physics Letters, 1975
- Thermal oxidation of GaAsApplied Physics Letters, 1975
- The Anodic Oxidation of GaAs in Aqueous H[sub 2]O[sub 2] SolutionJournal of the Electrochemical Society, 1973