Resistive switching in a Pt/TiO2/Pt thin film stack – a candidate for a non-volatile ReRAM
- 31 October 2007
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 84 (9-10), 1982-1985
- https://doi.org/10.1016/j.mee.2007.04.042
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Impedance spectroscopy of TiO2 thin films showing resistive switchingApplied Physics Letters, 2006
- Resistive switching mechanism of TiO2 thin films grown by atomic-layer depositionJournal of Applied Physics, 2005
- Hysteretic current–voltage characteristics and resistance switching at a rectifying Ti∕Pr0.7Ca0.3MnO3 interfaceApplied Physics Letters, 2004
- Resistive switching in metal–ferroelectric–metal junctionsApplied Physics Letters, 2003
- Electrical current distribution across a metal–insulator–metal structure during bistable switchingJournal of Applied Physics, 2001
- Reproducible switching effect in thin oxide films for memory applicationsApplied Physics Letters, 2000
- Switching phenomena in titanium oxide thin filmsSolid-State Electronics, 1968