The electrical characteristics of InP implanted with the column IV elements
- 30 November 1980
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 23 (11), 1151-1154
- https://doi.org/10.1016/0038-1101(80)90026-x
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
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- Implantation and PH 3 Ambient Annealing of InPJournal of the Electrochemical Society, 1978
- N-type doping of indium phosphide by implantationSolid-State Electronics, 1978
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- Carbon-ion-implanted gallium arsenideApplied Physics Letters, 1976
- Sperrfreie kontakte an indiumphosphidSolid-State Electronics, 1973
- Properties of ion implanted silicon, sulfur, and carbon in gallium arsenideRadiation Effects, 1970