Hot-wall epitaxial growth of Pb1−xSnxTe hetero-layers for infrared diode laser devices
- 31 March 1982
- journal article
- Published by Elsevier in Infrared Physics
- Vol. 22 (2), 97-107
- https://doi.org/10.1016/0020-0891(82)90024-0
Abstract
No abstract availableThis publication has 25 references indexed in Scilit:
- MBE techniques for IV–VI optoelectronic devicesProgress in Crystal Growth and Characterization, 1979
- Single heterostructure lasers of PbS1-xSexand Pb1-xSnxSe with wide tunabilityIEEE Journal of Quantum Electronics, 1977
- Temperature-gradient lpe growth of Pbl-x Snx TeJournal of Electronic Materials, 1977
- Invited: IV-VI Narrow Gap Semiconductors and DevicesJapanese Journal of Applied Physics, 1977
- Double-heterostructure PbSnTe lasers grown by molecular-beam epitaxy with cw operation up to 114 KApplied Physics Letters, 1976
- Cd-diffused Pb1−xSnxTe lasers with high output powerApplied Physics Letters, 1976
- Liquid phase epitaxial growth of laser heterostructures in Pb1−xSnxTeApplied Physics Letters, 1974
- SPONTANEOUS AND LASER EMISSION FROM Pb1−xSnxTe DIODES PREPARED BY Sb DIFFUSIONApplied Physics Letters, 1970
- Preparation and properties of lead-tin telluride photodiodesSolid-State Electronics, 1970
- LONG-WAVELENGTH INFRARED Pb1−xSnxTe DIODE LASERSApplied Physics Letters, 1968