New method for epitaxial heterostructure layer growth
- 20 July 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (3), 267-269
- https://doi.org/10.1063/1.107965
Abstract
A new method for the fabrication of compound thin films inside single-crystalline matrices is demonstrated. It differs from all known techniques by the combination of epitaxial growth of the host material and the controlled deposition of a precipitating compound. A subsequent thermal treatment leads to a coalescence of the precipitates, resulting in a continuous buried layer. We call this method allotaxy. As an example we demonstrate the growth of buried epitaxial CoSi2 layers in Si(100).Keywords
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