Defects in ultrafast quenched aluminum-doped silicon
- 1 February 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (3), 263-265
- https://doi.org/10.1063/1.95651
Abstract
Deep level transient spectroscopy has been applied to the study of defects in ultrafast quenched (cw laser irradiated) aluminum-doped silicon. Iron-aluminum pairs, with energy levels H(0.13) and H(0.20), are observed. A third hole trap, H(0.52), is identified as associated with the aluminum-vacancy center. No quenched-in interstitial aluminum is detected. The results support the view that dopant diffusion in silicon takes place primarily via vacancies at high temperature.Keywords
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