Monolithic two-dimensional arrays of high-power GaInAsP/InP surface-emitting diode lasers
- 16 June 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (24), 1636-1638
- https://doi.org/10.1063/1.97025
Abstract
Two-dimensional arrays of 16 laser elements have been fabricated using the mass transport process. Good uniformity, low threshold current (typically 11–14 mA per element), and high total cw power (up to 0.27 W at 22 °C) were obtained.Keywords
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