Temperature and electric field characteristics of time-dependent dielectric breakdown for silicon dioxide and reoxidized-nitrided oxides
- 1 July 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 42 (7), 1329-1332
- https://doi.org/10.1109/16.391216
Abstract
No abstract availableKeywords
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