Glow-Discharge Deposition of Amorphous Silicon from SiH3F
- 1 August 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (8A), L576
- https://doi.org/10.1143/jjap.23.l576
Abstract
Glow discharge deposition of a-Si:H:F from SiH3F as well as SiH2F2 gas has been studied in comparison to that from SiH4. Deposition rate from SiH3F exceeds that from SiH4 by 2–3 times in magnitude under a low-power deposition condition.Keywords
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