Shallow donors and D-X centers neutralization by atomic hydrogen in GaAlAs doped with silicon
- 1 July 1988
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (1), 207-210
- https://doi.org/10.1063/1.341464
Abstract
Hydrogen plasma exposure of silicon‐doped Ga1−xAlxAs epilayers with xxx increases. For x≂0.25, the D‐X centers are very efficiently neutralized by hydrogen and, as a consequence, the conductivity mechanisms after exposure are only governed by the remaining shallow donors. For 0.29<xD‐X centers are neutralized, but the electron mobility after hydrogenation is reduced.Keywords
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