Interband Auger recombination in InGaAsP
- 1 June 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 18 (6), 938-941
- https://doi.org/10.1109/jqe.1982.1071648
Abstract
No abstract availableThis publication has 20 references indexed in Scilit:
- Band-to-band Auger recombination effect on InGaAsP laser thresholdIEEE Journal of Quantum Electronics, 1981
- Electroreflectance study of InGaAsP quaternary alloys lattice matched to InPIEEE Journal of Quantum Electronics, 1981
- Gain-current relation for In0.72Ga0.28As0.6P0.4 lasersJournal of Applied Physics, 1981
- Band-to-band Auger effect in GaSb and InAs lasersJournal of Applied Physics, 1980
- Phonon-assisted auger recombination in degenerate semiconductorsSolid State Communications, 1977
- Room-temperature cw operation of buried-stripe double-heterostructure GaInAsP/InP diode lasersApplied Physics Letters, 1977
- Auger recombination in germaniumPhysica Status Solidi (a), 1974
- Auger recombination in InAs, GaSb, InP, and GaAsJournal of Applied Physics, 1972
- Overlap Integrals for Bloch ElectronsProceedings of the Physical Society, 1963
- Auger effect in semiconductorsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1959