Viable strained-layer laser at λ=1100 nm
- 15 January 1990
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 67 (2), 1132-1134
- https://doi.org/10.1063/1.345758
Abstract
In0.45Ga0.55As/GaAs/AlGaAs quantum well lasers emitting at 1100 nm have been fabricated and evaluated. These devices, which employ a highly strained quantum well region, exhibit low- (250 A/cm2) threshold current density and excellent reliability both of which were hitherto unattainable at such high In mole fractions.Keywords
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