A Pseudomorphic In0.53Ga0.47As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room Temperature
- 1 August 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (8A), L1332-1334
- https://doi.org/10.1143/jjap.26.l1332
Abstract
We have studied the effect of barrier height on the negative differential resistance characteristics of In0.53Ga0.47As-based resonant tunneling barriers (RTBs), including In0.53Ga0.47As/(In0.52Al0.48As) x (In0.53Ga0.47As)1-x RTBs, lattice-matched to an InP substrate, and In0.53Ga0.47As/AlAs pseudomorphic RTBs also grown on InP substrates. A peak-to-valley current ratio of 14 (300 K) and 35 (77 K) with a high peak-current density of 2.3×104A/cm2 was achieved for a resonant tunneling barrier structure of In0.53Ga0.47As (15 atomic layers)/AlAs (9 atomic layers).Keywords
This publication has 15 references indexed in Scilit:
- Quantum Well Width Dependence of Negative Differential Resistance of In0.52Al0.48As/In0.53Ga0.47As Resonant Tunneling Barriers Grown by MBEJapanese Journal of Applied Physics, 1987
- Excellent Negative Differential Resistance of InAlAs/InGaAs Resonant Tunneling Barrier Structures Grown by MBEJapanese Journal of Applied Physics, 1986
- Conduction Band Edge Discontinuity of In0.52Ga0.48As/In0.52(Ga1-xAlx)0.48As(0≦x≦1) HeterostructuresJapanese Journal of Applied Physics, 1986
- Observation of a negative differential resistance due to tunneling through a single barrier into a quantum wellApplied Physics Letters, 1986
- Precise Control of Resonant Tunneling Current in AlAs/GaAs/AlAs Double Barrier Diodes with Atomically-Controlled Barrier WidthsJapanese Journal of Applied Physics, 1986
- Room Temperature Observation of Differential Negative Resistance in an AlAs/GaAs/AlAs Resonant Tunneling DiodeJapanese Journal of Applied Physics, 1985
- Resonant tunneling oscillations in a GaAs-AlxGa1−xAs heterostructure at room temperatureApplied Physics Letters, 1985
- Defects in epitaxial multilayers I. Misfit dislocationsJournal of Crystal Growth, 1974
- Tunneling in a finite superlatticeApplied Physics Letters, 1973
- Band structure of indium antimonideJournal of Physics and Chemistry of Solids, 1957