Excellent Negative Differential Resistance of InAlAs/InGaAs Resonant Tunneling Barrier Structures Grown by MBE
- 1 December 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (12A), L983
- https://doi.org/10.1143/jjap.25.l983
Abstract
Light electron effective mass was found to be a very important parameter for improving the negative differential resistance (NDR) of a resonant tunneling barrier (RTB) structure. An InAlAs (41 Å)/InGaAs (61.5 Å)/InAlAs (41 Å) RTB structure, lattice-matched to Ink, has been grown for the first time by MBE and dramatically improved NDR has been achieved. Peak current density as high as 2.2×104 A/cm2 with an excellent peak-to-valley current ratio of 11.7 was obtained at 77 K, which is the best data ever reported so far for any RTB structures.Keywords
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