Depth profiles of Li ions implanted in the photoresist AZ111
- 1 December 1988
- journal article
- Published by Springer Nature in Journal of Materials Research
- Vol. 3 (6), 1422-1426
- https://doi.org/10.1557/jmr.1988.1422
Abstract
Depth profiles of 30–150 keV6Li implanted into the photoresist AZ111 have been analyzed through the 6Li(n,a)t nuclear reaction using thermal neutrons. As was found recently for 10B and 19F implanted into the same material, at certain threshold implantation energy the Li ions also split up into a regular and a nonregular distribution. This energy differs from the energies found for 10B and 19F, but at the threshold the electronic stopping power has the same value of about 20 eV/Å in the three cases. The nonregular Li fraction, typically around 10% of the implanted atoms, redistributes according to the TRIM code predicted profile of electronic energy transfer. The regular component exhibits a range profile that is well described by the TRIM code particle distribution predictions. The analysis of the B, F, and Li data shows that there is an approximately linear relation between the nonregular fraction of ions and the density of total deposited energy.Keywords
This publication has 10 references indexed in Scilit:
- Non-regular depth profiles of light ions implanted into organic polymer filmsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1988
- Implanted boron depth profiles in the AZ111 photoresistJournal of Applied Physics, 1988
- Dose and energy dependence of implanted ion profiles (9:≦ 1 ≦ 83) in the AZ111 photoresistNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Mass and energy dependence of implanted ion profiles in the AZ111 photoresistJournal of Applied Physics, 1986
- Distributions of light ions and foil destruction after irradiation of organic polymersJournal of Applied Physics, 1985
- New projected range algorithm as derived from transport equationsThe European Physical Journal A, 1982
- Effective stopping-power charges of swift ions in condensed matterPhysical Review B, 1982
- Stopping power values of Be, C, Al and Si for 4He ionsNuclear Instruments and Methods, 1980
- A Monte Carlo computer program for the transport of energetic ions in amorphous targetsNuclear Instruments and Methods, 1980
- Concepts of Backscattering SpectrometryPublished by Elsevier ,1978