Monolithic integration of a double heterostructure light-emitting diode and a field-effect transistor amplifier using molecular beam grown AlGaAs/GaAs
- 15 August 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (4), 345-347
- https://doi.org/10.1063/1.94331
Abstract
A surface emitting AlGaAs/GaAs double heterostructure light-emitting diode (LED) and an amplifier composed of three GaAs field-effect transistors have been first integrated on a single GaAs substrate. Molecular beam epitaxy has been extensively used to grow a six-layer heterostructure involving a high resistivity AlGaAs layer for electronic isolation. Input voltage to output optical power transfer characteristics are presented. It has also been shown that this integrated device successfully operates at the speed limited by the LED rise time, 7 ns in the present case.Keywords
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