Electron-paramagnetic-resonance study of heat-treatment centers in n-type silicon
- 1 December 1987
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (11), 4404-4405
- https://doi.org/10.1063/1.339076
Abstract
Donor formation in heat-treated phosphorus-doped Czochralski-grown silicon has been studied by electron paramagnetic resonance and resistivity measurements. Both ‘‘thermal-donor-’’ and ‘‘new-donor’’-formation temperature regions (470 and 650 °C, respectively) have been investigated. The results allow one to identify the spectra in both regions as arising from the Si-NL10 defect.Keywords
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