Oxygen donor formation and oxygen precipitation in czochralski silicon due to heat treatment at 600 to 800 °c
- 16 August 1985
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 90 (2), K151-K156
- https://doi.org/10.1002/pssa.2210900254
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Infrared Spectroscopical and TEM Investigations of Oxygen Precipitation in Silicon Crystals with Medium and High Oxygen ConcentrationsPhysica Status Solidi (a), 1984
- Early stages of oxygen segregation and precipitation in siliconJournal of Applied Physics, 1984
- On the effect of ambients on the formation of oxygen-related donors in Cz-SiPhysica Status Solidi (a), 1983
- Oxygen-Related Donors Formed at 600 °C in Silicon in Dependence on Oxygen and Carbon ContentPhysica Status Solidi (a), 1983
- Influence of oxygen on silicon resistivityJournal of Applied Physics, 1980
- On the kinetics of thermal donors in oxygen-rich silicon in the range from 450 to 900°CPhysica Status Solidi (a), 1980
- Comparison of two kinds of oxygen donors in silicon by resistivity measurementsJournal of Applied Physics, 1979
- Precipitation of oxygen in dislocation-free siliconPhysica Status Solidi (a), 1979
- Defects in silicon substratesJournal of Vacuum Science and Technology, 1977