A planar-doped 2D-hole gas base AlGaAs/GaAs heterojunction bipolar transistor grown by molecular beam epitaxy
- 1 January 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 9 (1), 7-9
- https://doi.org/10.1109/55.20396
Abstract
A novel type of AlGaAs/GaAs heterojunction bipolar transistor (HBT) which uses a two-dimensional (2-D) hole gas base formed by planar doping using molecular-beam epitaxy (MBE) has been demonstrated. The base consists of a submonolayer of Be atoms of sheet concentration 0.5-5*10/sup 13/ cm/sup -2/ which is deposited during growth interruption by MBE. The transistor structure exhibits DC current gains up to 700. The effective base transit time is negligible in these transistors and it is postulated that very high-speed nonequilibrium transport may occur in the collector region.Keywords
This publication has 20 references indexed in Scilit:
- Nonequilibrium electron transport in bipolar devicesApplied Physics Letters, 1987
- AlGaAs/GaAs heterojunction bipolar transistors fabricated using a self-aligned dual-lift-off processIEEE Electron Device Letters, 1987
- Comparison of compositionally graded to abrupt emitter-base junctions used in the heterojunction bipolar transistorJournal of Applied Physics, 1987
- On the estimation of base transit time in AlGaAs/GaAs bipolar transistorsIEEE Electron Device Letters, 1987
- GaAs inversion-base bipolar transistor (GaAs IBT)IEEE Electron Device Letters, 1986
- The bipolar inversion channel field-effect transistor (BICFET)—A new field-effect solid-state device: Theory and structuresIEEE Transactions on Electron Devices, 1985
- High-gain, high-frequency AlGaAs/GaAs graded band-gap base bipolar transistors with a Be diffusion setback layer in the baseApplied Physics Letters, 1985
- Bulk-barrier transistorIEEE Transactions on Electron Devices, 1983
- Measurement of high electron drift velocity in a submicron, heavily doped graded gap AlxGa1−xAs layerApplied Physics Letters, 1983
- (GaAl)As/GaAs heterojunction bipolar transistors with graded composition in the baseElectronics Letters, 1983