Recent progress in semiconductor lasers — cw GaAs lasers are now ready for new applications
- 1 October 1974
- journal article
- research article
- Published by Springer Nature in Applied Physics A
- Vol. 5 (1), 25-36
- https://doi.org/10.1007/bf01193390
Abstract
No abstract availableKeywords
This publication has 29 references indexed in Scilit:
- Stress compensation in Ga1−xAlxAs1−yPy LPE layers on GaAs substratesApplied Physics Letters, 1973
- Threshold, spectral, and output power characteristics of GaAs/Ga1−xAlxAs single-heterostructure diode lasersApplied Physics Letters, 1973
- cw degradation at 300°K of GaAs double-heterostructure junction lasers. I. Emission spectraJournal of Applied Physics, 1973
- Continuous operation of GaAs–Ga1 − xAlxAs double-heterostructure lasers with 30 °C half-lives exceeding 1000 hApplied Physics Letters, 1973
- Experimental properties of injection lasers. IV. Modes of large cavity with sawed sidesJournal of Applied Physics, 1973
- Mesa-stripe-geometry double-heterostructure injection lasersIEEE Journal of Quantum Electronics, 1973
- Spectral behavior and linewidth of (GaAl)As-GaAs double-heterostructure lasers at room temperature with stripe geometry configurationIEEE Journal of Quantum Electronics, 1973
- Experimental tests of proposed mechanisms for gradual degradation of GaAs double-heterostructure injection lasersIEEE Journal of Quantum Electronics, 1972
- Comments on the reliability of GaAs Stripe-Geometry juntion lasersIEEE Journal of Quantum Electronics, 1970
- Dynamics of injection lasersIEEE Journal of Quantum Electronics, 1968