Improvement of Electrolessly Gap-Filled Cu Using 2,2[sup ʹ]-Dipyridyl and Bis-(3-sulfopropyl)-disulfide (SPS)
- 1 January 2005
- journal article
- Published by The Electrochemical Society in Electrochemical and Solid-State Letters
- Vol. 8 (8), C110-C113
- https://doi.org/10.1149/1.1943551
Abstract
The use of bis(3-sulfopropyl) disulfide (SPS) in Cu electroless deposition resulted in Cu bottom-up filling. However, the high accelerating effect of SPS led to a poor electrical property of the film and generated many voids in the film by increasing the surface roughness and causing unstable deposition behavior. The addition of 2,-dipyridyl together with SPS substantially improved the film quality of the gap-filled Cu maintaining the bottom-up filling behavior. It lowered the film resistivity by approximately 23% and enhanced the crystallinity. No voids were detected in the as-deposited Cu even after annealing.Keywords
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