RESET Mechanism of TiOx Resistance-Change Memory Device
- 27 May 2009
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 30 (7), 733-735
- https://doi.org/10.1109/led.2009.2021001
Abstract
In this letter, the physical mechanisms of resetting a TiOx resistance-change memory device are explored for both unipolar and bipolar switching modes. It is observed that the statistical distributions of switching parameters are very different for the two types of switching modes. The data support previous evidence that thermal dissolution of the conductive filament (CF) is the mechanism for unipolar reset, while local redox reaction is responsible for bipolar reset. It is found that the CF is destroyed during unipolar switching but can be reused during bipolar switching.Keywords
This publication has 9 references indexed in Scilit:
- Elimination of Forming Process for TiOx Nonvolatile Memory DevicesIEEE Electron Device Letters, 2009
- Control of resistance switching voltages in rectifying Pt∕TiOx∕Pt trilayerApplied Physics Letters, 2008
- Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: Homogeneous/inhomogeneous transition of current distributionPhysical Review B, 2008
- Fast switching and long retention Fe-O ReRAM and its switching mechanismPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2007
- Coexistence of Bipolar and Unipolar Resistive Switching Behaviors in a Pt∕TiO[sub 2]∕Pt StackElectrochemical and Solid-State Letters, 2007
- Conductive-filament switching analysis and self-accelerated thermal dissolution model for reset in NiO-based RRAMPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2007
- Ti O 2 anatase nanolayer on TiN thin film exhibiting high-speed bipolar resistive switchingApplied Physics Letters, 2006
- Impedance spectroscopy of TiO2 thin films showing resistive switchingApplied Physics Letters, 2006
- Resistive switching mechanism of TiO2 thin films grown by atomic-layer depositionJournal of Applied Physics, 2005