High-frequency performance of InGaAs metal-semiconductor-metal photodetectors at 1.55 and 1.3 μm wavelengths
- 21 August 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (8), 729-731
- https://doi.org/10.1063/1.101788
Abstract
The high-speed performance of InGaAs interdigitated metal-semiconductor-metal (M-S-M) photodetectors illuminated with 1.55 and 1.3 μm wavelength radiation is modeled using a two-dimensional transit time calculation. Excellent agreement is found with the experimental pulse response of detectors with interdigital spacings of 2 and 3 μm. We study the dependence of the bandwidth on the device dimensions, and also examine the quantum efficiency. The results should aid the design of InGaAs M-S-M detectors with the optimum combination of bandwidth and efficiency for a given application.Keywords
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