Plasma anodization of oxygen-sputtered GaAs surfaces
- 15 April 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 34 (8), 484-485
- https://doi.org/10.1063/1.90856
Abstract
A simple method of preparing plasma‐grown anodic oxide on GaAs with improved physical and electrical properties is described. A GaAs surface was sputtered by positive oxygen ions prior to the plasma anodization, resulting in a Ga‐rich oxide layer on the surface. The oxide formed through this Ga‐rich layer had a low pin hole density and exhibited high breakdown voltages (3×106 V/cm) and less hysteresis in MOS‐device C‐V characteristics.Keywords
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