Electroreflectance investigation of In1−xGaxAsyP1−y lattice-matched to InP
- 30 November 1980
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 36 (5), 419-422
- https://doi.org/10.1016/0038-1098(80)90924-2
Abstract
No abstract availableThis publication has 27 references indexed in Scilit:
- Ion-implanted InGaAsP avalanche photodiodeApplied Physics Letters, 1978
- High-efficiency In1−xGaxAsyP1−y/InP photodetectors with selective wavelength response between 0.9 and 1.7 μmApplied Physics Letters, 1978
- Band gap versus composition and demonstration of Vegard’s law for In1−xGaxAsyP1−y lattice matched to InPApplied Physics Letters, 1978
- Lattice vibrations of In1−xGaxAsyP1−y quaternary compoundsApplied Physics Letters, 1978
- GaInAsP/InP avalanche photodiodesApplied Physics Letters, 1978
- In1-xGaxAsyP1-y/InP DH lasers fabricated on InPIEEE Journal of Quantum Electronics, 1978
- Velocity-field characteristics of Ga1−xInxP1−yAsy quaternary alloysApplied Physics Letters, 1977
- Room-temperature cw operation of GaInAsP/InP double-heterostructure diode lasers emitting at 1.1 μ mApplied Physics Letters, 1976
- Efficient lattice-matched double-heterostructure LED’s at 1.1 μm from GaxIn1−xAsyP1−yApplied Physics Letters, 1976
- Heterojunction lasers made of GaxIn1–xAsyP1–yand AlxGa1–xSbyAS1–ysolid solutionsSoviet Journal of Quantum Electronics, 1975