Direct Etching of Resists by UV Light
- 1 October 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (10), L709
- https://doi.org/10.1143/jjap.20.l709
Abstract
Etching characteristics of some positive working resists by means of ultraviolet light irradiation were evaluated. Degradable resist polymers were found to be etched effectively in a room atmosphere and at a comparatively low temperature. The pure PMIPK [poly (methyl isopropenyl ketone)] showed that the greatest etching rate and fine resist patterns could be obtained directly by the UV-etching method. It is pointed out that the UV-etching method can be applied, as the simplest dry method, to making resist patterns as well as to ashing the resists.Keywords
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