Index-guided operation in narrow stripe InGaAs-GaAs strained-layer quantum well heterostructure lasers by MeV oxygen implantation

Abstract

Stable index-guided operation of variable stripe strained-layer InGaAs-GaAs-AlGaAs lasers achieved by MeV oxygen implantation-induced disorder of the active region is demonstrated. Well-behaved near- and far-field patterns for lasers implanted with 5×1016 cm−2 and 1×1017 cm−2 oxygen are observed to be stable with increasing drive current. Comparison with unimplanted, oxide-defined stripe lasers fabricated from the same wafer indicates a dramatic improvement in emission characteristics as a result of the presence of a lateral real-index waveguide in the oxygen-disordered regions which is stronger than the carrier-induced antiguide present in unimplanted InGaAs-GaAs strained-layer lasers.