Preparation of β-SiC films by r.f. sputtering
- 1 January 1977
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 40, L27-L29
- https://doi.org/10.1016/0040-6090(77)90096-7
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Single−crystal β−SiC films by reactive sputteringApplied Physics Letters, 1975
- LOW-TEMPERATURE EPITAXY OF β-SiC BY REACTIVE DEPOSITIONApplied Physics Letters, 1970
- Growth morphology and crystallographic orientation of β-SiC films formed by chemical conversionThin Solid Films, 1970
- Chemical Processes in SiC Formation by Reactive Deposition and Chemical ConversionJournal of Applied Physics, 1969
- Growth and Properties of β-SiC Single CrystalsJournal of Applied Physics, 1966
- Infrared Properties of Hexagonal Silicon CarbidePhysical Review B, 1959