Monolithic integration of an AlGaAs/GaAs multiquantum well laser and GaAs metal-semiconductor field-effect transistors on a semi-insulating GaAs substrate by molecular beam epitaxy
- 1 February 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (3), 325-327
- https://doi.org/10.1063/1.94741
Abstract
No abstract availableKeywords
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