New empirical relation for MOSFET noise unified over linear and saturation regions
- 1 December 1988
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 31 (12), 1675-1680
- https://doi.org/10.1016/0038-1101(88)90063-9
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Flicker (1/f) noise generated by a random walk of electrons in interfacesIEEE Transactions on Electron Devices, 1987
- Spectral dependence of 1ƒγ noise on gate bias in n-MOSFETSSolid-State Electronics, 1987
- Experimental studies on 1/f noiseReports on Progress in Physics, 1981
- Carrier fluctuation noise in a MOSFET channel due to traps in the oxideSolid-State Electronics, 1978
- Measurements and interpretation of low-frequency noise in FET'sIEEE Transactions on Electron Devices, 1974
- Surface state related noise in MOS transistorsSolid-State Electronics, 1970
- Theory of low frequency noise in Si MOST'sSolid-State Electronics, 1970
- Low frequency noise in MOS transistors—II ExperimentsSolid-State Electronics, 1968
- Low frequency noise in MOS transistors—I TheorySolid-State Electronics, 1968
- A Quantitative Theory of 1/fType Noise Due to Interface States in Thermally Oxidized SiliconBell System Technical Journal, 1967