Measurement of threshold voltages of thin-film accumulation-mode PMOS/SOI transistors
- 1 December 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 12 (12), 682-684
- https://doi.org/10.1109/55.116954
Abstract
Accumulation-mode PMOS transistors on SOI (silicon on insulator) are characterized by several conduction mechanisms. Measurements of the threshold voltage corresponding to each of them are presented for the first time. An intuitive physical interpretation of their dependence on the front- and back-gate voltages is also given.Keywords
This publication has 3 references indexed in Scilit:
- Problems in designing thin-film accumulation-mode p-channel SOI MOSFETs for CMOS digital circuit environmentElectronics Letters, 1991
- Conduction mechanisms in thin-film accumulation-mode SOI p-channel MOSFETsIEEE Transactions on Electron Devices, 1990
- Thin-film, accumulation-mode p-channel SOI MOSFETsElectronics Letters, 1988