Molecular beam epitaxy of silicon: Effects of heavy Sb doping
- 1 April 1981
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 52, 151-158
- https://doi.org/10.1016/0022-0248(81)90185-8
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Si–MBE: Growth and Sb dopingJournal of Vacuum Science and Technology, 1979
- Si Molecular Beam Epitaxy (n on n+) with Wide Range Doping ControlJournal of the Electrochemical Society, 1977
- Acceptor dopants in silicon molecular-beam epitaxyJournal of Applied Physics, 1977
- A one-dimensional SiGe superlattice grown by UHV epitaxyApplied Physics A, 1975
- Interface and doping profile characteristics with molecular-beam epitaxy of GaAs: GaAs voltage varactorJournal of Applied Physics, 1974
- Properties of Schottky barriers and p-n junctions prepared with GaAs and Alx Ga1−x As molecular beam epitaxial layersJournal of Applied Physics, 1974
- Dislocation Etch for (100) Planes in SiliconJournal of the Electrochemical Society, 1972
- P-N Junction Formation during Molecular-Beam Epitaxy of Ge-Doped GaAsJournal of Applied Physics, 1971
- Measurement of resistivity and mobility in silicon epitaxial layers on a control waferSolid-State Electronics, 1966
- Electrical Properties of Silicon Containing Arsenic and BoronPhysical Review B, 1954