Ion implantation damage in InP
- 15 May 1983
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research
- Vol. 209-210, 761-766
- https://doi.org/10.1016/0167-5087(83)90880-3
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Stoichiometric disturbances in ion implanted compound semiconductorsJournal of Applied Physics, 1981
- Implantation in InPJournal of Crystal Growth, 1981
- Selenium implantation in indium phosphideJournal of Applied Physics, 1981
- Damage and reordering of ion-implanted layers of InPApplied Physics Letters, 1981
- Disorder production and amorphisation in ion implanted siliconRadiation Effects, 1980
- Critical implantation temperature and annealing of indium phosphideJournal of Vacuum Science and Technology, 1979
- Energy spikes in Si and Ge due to heavy ion bombardmentRadiation Effects, 1978
- Measurement of damage distributions in ion bombarded Si, GaP and GaAs at 50 KNuclear Instruments and Methods, 1976